Define on-wafer and packaged device characterization plans, including DC, capacitance-voltage (CV), small-signal RF (S-parameters), noise, and large-signal measurements (e.g., load-pull, pulsed I-V)
Develop and refine accurate, physics-based compact models for GaN HEMTs using industry-standard modeling tools and techniques (e.g., MVSG, ASM-HEMT, Angelov)
Utilize TCAD and circuit simulation tools (e.g., Keysight ADS, Cadence AWR/Spectre, Synopsys, Silvaco) to perform simulations, analyze data, and validate model accuracy against hardware measurements
Collaborate with the PDK Team and provide support for both internal and external customers
Work closely with process engineers to link device performance to fabrication parameters
Conduct in-depth analysis of test data, identify device or measurement issues, and propose solutions for performance and yield improvement
Prepare detailed technical reports, documentation, and application notes for model usage and limitations
Research and develop novel modeling solutions and characterization techniques, and mentor junior engineers or team members.
Requirements
15+ years of experience in semiconductor device characterization and modeling, specifically with RF GaN HEMT technologies
Master's or Ph.D. in Electrical Engineering, Applied Physics, or a related field
Deep theoretical and practical understanding of GaN device physics and materials science
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