Project Engineer Intern supporting a large water and wastewater construction project in Austin, TX. Collaborating with project team to gain hands - on experience in construction management.
About the role
- RF GaN Transistor Modeling Engineer responsible for developing GaN models for high-frequency applications. Collaborating with teams to ensure device performance meets reliability standards.
Responsibilities
- Device Characterization: Define on-wafer and packaged device characterization plans, including DC, capacitance-voltage (CV), small-signal RF (S-parameters), noise, and large-signal measurements (e.g., load-pull, pulsed I-V)
- Model Development & Extraction: Develop and refine accurate, physics-based compact models for GaN HEMTs using industry-standard modeling tools and techniques (e.g., MVSG, ASM-HEMT, Angelov)
- Simulation & Validation: Utilize TCAD and circuit simulation tools (e.g., Keysight ADS, Cadence AWR/Spectre, Synopsys, Silvaco) to perform simulations, analyze data, and validate model accuracy against hardware measurements
- PDK Development: Collaborate with the PDK Team and provide support for both internal and external customers
- Cross-Functional Collaboration: Work closely with process engineers to link device performance to fabrication parameters, with reliability engineers to understand long-term device stability, and with circuit designers to ensure models meet their design requirements
- Analysis & Troubleshooting: Conduct in-depth analysis of test data, identify device or measurement issues, and propose solutions for performance and yield improvement
- Documentation & Reporting: Prepare detailed technical reports, documentation, and application notes for model usage and limitations
- Innovation & Mentorship: Research and develop novel modeling solutions and characterization techniques, and mentor junior engineers or team members
Requirements
- Master's or Ph.D. in Electrical Engineering, Applied Physics, or a related field with a focus on semiconductor devices
- 15+ years of experience in semiconductor device characterization and modeling, specifically with RF GaN HEMT technologies
- Deep theoretical and practical understanding of GaN device physics and materials science
- Proficiency with RF characterization equipment (network analyzers, spectrum analyzers, load-pull systems, probe stations)
- Expertise in industry-standard RF simulation and modeling tools (Keysight ADS, Cadence AWR, TCAD tools, etc.)
- Strong programming and data analysis skills (e.g., Python, MATLAB, C++) for automation and data interpretation
Benefits
- Equal Employment Opportunity (EEO) employer
- Innovative RF and Power solutions
Job title
Job type
Experience level
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Not specified
Degree requirement
Tech skills
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