Development Engineer for III/V laser diodes at Lumics GmbH, involved in simulation and design of structures for high-performance semiconductors. Join our team to innovate in laser technology within industrial applications.
Responsibilities
Simulation and design of epitaxial structures (heterostructures) for III/V semiconductor laser diodes in the mid-infrared (MIR) range (GaAs-, InP- or GaSb-based systems)
Development and optimization of quantum wells/films, barriers, waveguides and doping profiles with particular focus on brightness, efficiency and reliability
Use and further development of simulation and design software (e.g. HAROLD, LUMERICAL, APSYS, MATLAB or comparable tools), including the development of in-house models where applicable
Design, simulation and further development of chip and heterostructure designs for III/V semiconductor laser diodes based on physical models (band structure, carrier dynamics, recombination mechanisms, thermal management)
Analysis of the physical relationships between epitaxial structure and the optoelectronic properties of the devices
Validation of simulation results through close collaboration with process development and production
Independent planning, execution and development of experiments for analysis (LIV measurements – cw/pulsed, near- and far-field measurements, etc.), and use of characterization methods such as PL, XRD, TEM, SIMS or TLM
Collaboration with process development and production to transfer new chip and epitaxy concepts into series production
Opportunity to contribute to and publish scientific results in internal and external specialist forums
Requirements
University degree (Diploma, Master's or PhD) in Physics, Electrical Engineering, Materials Science or a related field with a focus on semiconductor devices
Solid knowledge in the simulation and development of heterostructures for III/V semiconductors (band structures, transport mechanisms, quantum wells/wires, non-radiative mechanisms)
Proven experience in the design of III/V laser diodes, ideally in the wavelength regions relevant to us
Confident use of device simulation tools or willingness to develop own physical models/tools
Basic understanding of epitaxial processes and their influence on device design is helpful but not a primary requirement for the role
Enjoy analytical work, problem solving and interdisciplinary collaboration
Very good written and spoken German and English
Benefits
30 days of vacation per year to maintain your work–life balance
A highly varied and challenging role with plenty of scope for shaping your work at a modern site
Flat hierarchies and short decision-making paths with lots of responsibility
Flexible working hours
Regular cross-team knowledge transfer
Numerous additional benefits such as employee and shopping discounts, on-site canteen, sports facilities (e.g. volleyball court, on-site gym), bike leasing and regular company events
Job title
Development Engineer Simulation & Design – III/V Laser Diodes
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